2SJ107_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ107
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ107
Unit: mm
• High input impedance: I_GSS = 1.0 nA (max) (V_GS = 25 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 40 Ω (typ.)
• Small package
• Complementary to 2SK366
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
25
V
−10
mA
200
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
I_GSS
V_GS = 25 V, V_DS = 0
⎯
⎯
1.0
nA
V _{(BR) GDS} V_DS = 0, I_G = 100 μA
25
⎯
⎯
V
I_DSS
V_DS = −10 V, V_GS = 0
(Note 1)
−2.6
⎯
−20 mA
V_{GS (OFF)} V_DS = −10 V, I_D = −0.1 μA
0.2
⎯
2.0
V
V_DS = −10 V, V_GS = 0, f = 1 kHz
⎪Y_fs⎪
12
30
⎯
mS
(Note 2)
C_iss
C_rss
V_DS = −10 V, V_GS = 0, f = 1 MHz
V_GD = 10 V, I_D = 0, f = 1 MHz
⎯ 105 ⎯
pF
⎯
32
⎯
pF
R_{DS (ON)} V_DS = −10 mV, V_GS = 0
(Note 2) ⎯
40
⎯
Ω
Note 1: I_DSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA
Note 2: Condition of the typical value I_DSS = −5 mA
1
2007-11-01