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2SJ106-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency Amplifier Applications | |||
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2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications
Unit: mm
⢠High breakdown voltage: VGDS = 50 V
⢠High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
⢠Low RDS (ON): RDS (ON) = 270 ⦠(typ.) (IDSS = â5 mA)
⢠Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
50
V
â10
mA
150
mW
125
°C
â55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-236MOD
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
TOSHIBA
SC-59
2-3F1B
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.012 g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Symbol
Test Condition
IGSS
VGS = 30 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
(Note)
VDS = â10 V, VGS = 0
VGS (OFF) VDS = â10 V, ID = â0.1 μA
âªYfsâª
VDS = â10 V, VGS = 0, f = 1 kHz
RDS (ON)
VDS = â10 mV, VGS = 0
IDSS = â5 mA
Ciss
VDS = â10 V, VGS = 0, f = 1 MHz
Crss
VDG = â10 V, ID = 0, f = 1 MHz
Min Typ. Max Unit
â¯
â¯
1.0
nA
50
â¯
â¯
V
â1.2
â¯
â14 mA
0.3
â¯
6.0
V
1.0 4.0
â¯
mS
⯠270 â¯
Ω
â¯
18
â¯
pF
â¯
3.6
â¯
pF
Note: IDSS classification Y: â1.2~â3.0 mA, GR (G): â2.6~â6.5 mA, BL (L): â6~â14 mA
Marking
1
2007-11-01
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