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2SJ105_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications | |||
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ105
Unit: mm
⢠High breakdown voltage: VGDS = 50 V
⢠High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
⢠Low RDS (ON): RDS (ON) = 270 ⦠(typ.) (IDSS = â5 mA)
⢠Complimentary to 2SK330
⢠Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
50
V
Gate current
IG
â10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
â55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
â
high temperature/current/voltage and the significant change in
JEITA
â
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
IGSS
V (BR) GDS
VGS = 30 V, VDS = 0
VDS = 0, IG = 100 μA
IDSS
VDS = â10 V, VGS = 0
(Note)
VGS (OFF)
âªYfsâª
RDS (ON)
Ciss
Crss
VDS = â10 V, ID = â0.1 μA
VDS = â10 V, VGS = 0, f = 1 kHz
VDS = â10 mV, VGS = 0
IDSS = â5 mA
VDS = â10 V, VGS = 0, f = 1 MHz
VDG = â10 V, ID = 0, f = 1 MHz
Note: IDSS classification Y: â1.2~â3.0 mA, GR: â2.6~â6.5 mA, BL: â6~â14 mA
Min Typ. Max Unit
â¯
â¯
1.0
nA
50
â¯
â¯
V
â1.2
â¯
â14 mA
0.3
â¯
6.0
V
1.0 4.0
â¯
mS
⯠270 â¯
Ω
â¯
18
â¯
pF
â¯
3.6
â¯
pF
1
2007-11-01
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