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2SJ104_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications | |||
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ104
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ104
Unit: mm
⢠High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
⢠Low RDS (ON) = 40 ⦠(typ.) (IDSS = â5 mA)
⢠Complimentary to 2SK364
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
25
V
â10
mA
400
mW
125
°C
â55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1D
Weight: 0.21 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
VDS = â10 V, VGS = 0
(Note 1)
â¯
â¯
1.0
nA
25
â¯
â¯
V
â2.6
â¯
â20 mA
VGS (OFF) VDS = â10 V, ID = â0.1 μA
0.2
â¯
2.0
V
VDS = â10 V, VGS = 0, f = 1 kHz
âªYfsâª
12
30
â¯
mS
(Note 2)
Ciss
VDS = â10 V, VGS = 0, f = 1 MHz
⯠105 â¯
pF
Crss
VDG = â10 V, ID = 0, f = 1 MHz
â¯
32
â¯
pF
RDS (ON) VDS = â10 mV, VGS = 0
(Note 2) â¯
40
â¯
Ω
Note 1: IDSS classification GR: â2.6~â6.5 mA, BL: â6~â12 mA, V: â10~â20 mA
Note 2: Condition of the typical value IDSS = â5 mA
1
2007-11-01
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