2SJ103_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ103
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SJ103
Unit: mm
• High breakdown voltage: V_GDS = 50 V
• High input impedance: I_GSS = 1.0 nA (max) (V_GS = 30 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 270 Ω (typ.) (I_DSS = −5 mA)
• Complimentary to 2SK246
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
50
V
−10
mA
300
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1C
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
I_GSS
V_GS = 30 V, V_DS = 0
⎯
⎯
1.0
nA
V _{(BR) GDS} V_DS = 0, I_G = 100 μA
50
⎯
⎯
V
I_DSS
V_DS = −10 V, V_GS = 0
(Note)
−1.2
⎯
−14 mA
V_{GS (OFF)} V_DS = −10 V, I_D = −0.1 μA
0.3
⎯
6.0
V
⎪Y_fs⎪
V_DS = −10 V, V_GS = 0, f = 1 kHz
1.0 4.0
⎯
mS
R_{DS (ON)} V_DS = −10 mV, V_GS = 0, I_DSS = −5 mA ⎯
270
⎯
Ω
C_iss
C_rss
V_DS = −10 V, V_GS = 0, f = 1 MHz
V_DG = −10 V, I_D = 0, f = 1 MHz
⎯
18
⎯
pF
⎯
3.6
⎯
pF
Note: I_DSS classification Y: −1.2~−3.0 mA, GR: −2.6~−6.5 mA, BL: −6~−14 mA
1
2007-11-01