2SD2719 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Solenoid Drive Applications Motor Drive Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2719
2SD2719
○ Solenoid Drive Applications
○ Motor Drive Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = 2 V, I_C = 1 A)
• Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
50
V
V_CEO
60±10
V
V_EBO
8
V
I_C
0.8
A
I_CP
3
I_B
0.5
A
0.8
P_C (Note)
W
1.25
T_j
150
°C
T_stg
−55 to 150
°C
Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm²)
1. Base
2. Emitter
3. Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≒5 kΩ
Emitter
≒300 Ω
1
2007-06-07