2SD2686 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Solenoid Drive Applications Motor Drive Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2686
2SD2686
Solenoid Drive Applications
Motor Drive Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = 2 A, I_C = 1 A)
• Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
50
V
V_CEO
60±10
V
V_EBO
8
V
I_C
1
A
I_CP
3
I_B
0.5
A
1.0
P_C (Note 1)
W
2.5
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm²)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≒^5kΩ
≒^300Ω
Emitter
1
2006-11-21