2SD2655 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

2SD2655
Silicon NPN Epitaxial Planer
Low Frequency Power Amplifier
ADE-208-1388A (Z)
Rev.1
Jun. 2001
Features
• Small size package: MPAK (SC–59A)
• Large Maximum current: I_C = 1 A
• Low collector to emitter saturation voltage: V_CE(sat) = 0.3 V max.(at I_C/I_B = 0.5 A/0.05 A)
• High power dissipation: P_C = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
• Complementary pair with 2SB1691
Outline
MPAK
Note: Marking is “WM-“.
3
1
2
1. Emitter
2. Base
3. Collector