2SD2638 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638
Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.
2SD2638
Unit: mm
· High voltage: VCBO = 1700 V
· Low saturation voltage: VCE (sat) = 5 V (max)
· High speed: tf = 0.8 µs (max)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
1700
V
750
V
5
V
7
A
14
3.5
A
50
W
150
°C
-55~150
°C
Equivalent Circuit
2. Collector
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
1. Base
50 W (typ.) _{3. Emitter}
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
Collector output capacitance
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) EBO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
V_F
f_T
C_ob
t_stg
t_f
V_CB = 1700 V, I_E = 0
V_EB = 5 V, I_C = 0
I_E = 400 mA, I_C = 0
V_CE = 5 V, I_C = 1 A
V_CE = 5 V, I_C = 5.5 A
I_C = 5.5 A, I_B = 1.2 A
I_C = 5.5 A, I_B = 1.2 A
I_F = 7 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 5.5 A, I_{B1 (end)} = 1.1 A,
f_H = 15.75 kHz
Min Typ. Max Unit
¾
¾
1
mA
66
¾
200 mA
5
¾
¾
V
8
¾
25
4.5
¾
7.5
¾
¾
5
V
¾
1.0
1.5
V
¾
1.3
2
V
¾
2
¾ MHz
¾
125
¾
pF
¾
7
9
ms
¾
0.4
0.8
1
2001-11-27