2SD2481_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Pulse Motor Drive, Hammer Drive Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD2481
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
2SD2481
Unit: mm
• High DC current gain: h_FE = 4000 (min) (V_CE = 2 V, I_C = 150 mA)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
30
V
Collector-emitter voltage
V_CEO
30
V
Emitter-base voltage
V_EBO
10
V
Collector current
I_C
1.5
A
Base current
I_B
0.15
A
Collector power dissipation
P_C
1.3
W
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
TOSHIBA
―
2-8M1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1
2006-11-21