2SD2461_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2461
Power Amplifier Applications
2SD2461
Unit: mm
• High DC current gain: h_{FE (1)} = 800 to 3200 (V_CE = 5 V, I_C = 0.1 A)
• Low saturation voltage: V_{CE (sat)} = 0.3 V (typ.) (I_C = 0.5 A, I_B = 5
mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
60
V
Emitter-base voltage
V_EBO
7
V
DC
Collector current
I_C
2
A
Pulse
I_CP
4
Base current
I_B
0.4
A
Collector power dissipation
Junction temperature
Storage temperature range
P_C
1.3
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-8M1A
temperature/current/voltage and the significant change in
Weight: 0.55 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-21