2SD2414 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS)

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
100
V
80
V
5
V
7
A
1
A
1.5
W
40
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S2
Weight: 1.4 g (typ.)
1
2003-02-04