2SD2206_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type (Darlington Power Transistor)

2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = 2 V, I_C = 1 A)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
100
V
Emitter-base voltage
V_EBO
8
V
DC
Collector current
I_C
2
A
Pulse
I_CP
3
Base current
Collector power dissipation
Junction temperature
Storage temperature range
I_B
0.5
A
P_C
900
mW
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2006-11-21