2SD2129_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Power Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2129
2SD2129
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
100
V
Emitter-base voltage
V_EBO
7
V
DC
Collector current
I_C
3
A
Pulse
I_CP
5
Base current
I_B
0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
2.0
W
20
JEDEC
JEITA
―
SC-67
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 5 kΩ
≈ 150 Ω
Emitter
1
2006-11-21