2SD1947A_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD1947A
High-Current Switching Applications
Lamp, Solenoid Drive Applications
2SD1947A
Unit: mm
• High DC current gain: h_FE = 500 to 1500 (I_C = 1 A)
• Low collector saturation voltage: V_{CE (sat)} = 0.3 V (max) (I_C = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
100
V
Emitter-base voltage
V_EBO
7
V
Collector current
DC
Pulse
I_C
10
A
I_CP
15
Base current
I_B
2
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
2.0
W
40
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
Emitter
1
2006-11-21