2SD1784_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro Motor Drive, Hammer Drive Applications

2SD1784
TOSHIBA Field Effect Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)
2SD1784
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 4000 (min) (V_CE = 2 V, I_C = 150 mA)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_CBO
30
V
V_CEO
30
V
V_EBO
10
V
I_C
1.5
A
I_B
50
mA
P_C
1000
mW
(Note 1)
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: 2SD1784 mounted on a ceramic substrate (250 mm² × 0.8 mm)
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-10