2SD1662_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Current Switching Applications

2SD1662
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1662
High Current Switching Applications
Unit: mm
• High DC current gain: h_FE = 1000 (min) (V_CE = 3 V, I_C = 15 A)
• Low collector saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 15 A)
• Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
V_CBO
100
V
V_CEO
100
V
V_EBO
5
V
I_C
15
A
I_B
1
A
P_C
100
W
T_j
150
°C
JEDEC
―
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-16C1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 4.7 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 200 Ω
EMITTER
1
2006-11-21