2SD1658_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro Motor Drive, Hammer Drive Applications

2SD1658
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1658
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (V_CE = 2 V, I_C = 1 A)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
• Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
60 ± 10
V
60 ± 10
V
8
V
2
A
0.5
A
1.5
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1
2009-12-21