2SD1631_10 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro Motor Drive, Hammer Drive Applications

2SD1631
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington Power Transistor)
2SD1631
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 4000 (min) (V_CE = 2 V, I_C = 150 mA)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
30
V
30
V
10
V
1.5
A
50
mA
1000
mW
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1
2010-03-10