2SD1525_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Current Switching Applications

2SD1525
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1525
High Current Switching Applications
Unit: mm
• High collector current: I_C = 30 A
• High DC current gain: h_FE = 1000 (min) (V_CE = 5 V, I_C = 20 A)
• Monolithic construction with built-in base-emitter shunt resistor.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
100
V
Collector-emitter voltage
V_CEO
100
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
30
A
Base current
I_B
5
A
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
P_C
150
W
JEDEC
―
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 2 kΩ
≈ 100 Ω
EMITTER
1
2009-08-06