2SD1508_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Pulse Motor Drive, Hammer Drive Applications

2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
• High DC current gain: h_FE = 4000 (min) (V_CE = 2 V, I_C = 150 mA)
• Low saturation voltage: V_{CE (sat)} = 1.5 V (max) (I_C = 1 A, I_B = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
30
V
30
V
10
V
1.5
A
3.0
50
mA
1.2
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1
2009-12-21