2SD1411A_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Current Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD1411A
High-Current Switching Applications
Power Amplifier Applications
2SD1411A
Unit: mm
• Low saturation voltage: V_{CE (sat)} = 0.5 V (max) at I_C = 4 A
• Complementary to 2SB1018A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
100
V
80
V
5
V
7
A
1
A
2.0
W
30
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-10R1A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21