2SD1410A_09 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Voltage Switching Applications

2SD1410A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
Industrial Applications
Unit: mm
• High DC current gain: h_FE = 2000 (min) (VCE = 2 V, I_C = 2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
300
V
Collector-emitter voltage
V_CEO
250
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
6
A
Base current
I_B
Collector power
dissipation
Ta = 25°C
Tc = 25°C
P_C
1
A
2.0
W
25
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-10R1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 1.7 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
Emitter
1
2009-12-21