2SD1409A_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications

2SD1409A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1409A
High Voltage Switching Applications
Industrial Applications
Unit: mm
• High DC current gain: h_FE = 600 (min.) (VCE = 2 V, I_C = 2 A)
• Monolithic construction with built-in base-emitter shunt resistor
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
600
V
400
V
5
V
6
A
1
A
2.0
W
25
150
°C
−55 to 150
°C
JEDEC
JEITA
―
SC-67
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10R1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 1.7 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Base
Collector
≈ 2.5 kΩ
≈ 200 Ω
Emitter
1
2009-12-21