2SD1314_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Power Switching Applications

2SD1314
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
2SD1314
High Power Switching Applications
Motor Control Applications
Unit: mm
• High DC current gain: h_FE = 100 (min) (V_CE = 5 V, I_C = 15 A)
• Low saturation voltage: V_{CE (sat)} = 2 V (max) (I_C = 15 A, I_B = 0.4 A)
• High speed: t_f = 3 μs (max) (I_C = 15 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
600
V
Collector-emitter voltage
V_CEO
450
V
Emitter-base voltage
V_EBO
6
V
DC
Collector current
I_C
15
A
Pulse
I_CP
30
Base current
I_B
1.0
A
JEDEC
―
Collector power dissipation
Junction temperature
Storage temperature range
P_C
150
W
T_j
150
°C
T_stg
−55 to 150
°C
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
≈ 300 Ω
≈ 100 Ω
EMITTER
1
2006-11-21