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2SD1140_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Micro Motor Drive, Hammer Drive Applications | |||
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2SD1140
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) (Darlington Power Transistor)
2SD1140
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
⢠High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
⢠Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
1.5
A
Base current
IB
50
mA
Collector power dissipation
Junction temperature
PC
900
mW
JEDEC
TO-92MOD
Tj
150
°C
Storage temperature range
Tstg
â55 to 150
°C
JEITA
â
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-5J1A
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
EMITTER
1
2009-12-21
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