2SC6135 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6135
2SC6135
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
2.1±0.1
1.7±0.1
• High DC current gain: h_FE = 400 to 1000 (I_C = 0.1A)
• Low collector-emitter saturation voltage: V_{CE (sat)} = 0.17 V (max)
• High-speed switching: t_f = 85 ns (typ.)
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
100
V
V_CEX
80
V
V_CEO
50
V
V_EBO
7
V
I_C
1.0
A
I_CP
2.0
I_B
0.1
A
P_{C (Note1)}
800
mW
P_{C (Note2)}
500
T_j
150
°C
T_stg
−55 to 150
°C
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Note1:
Note2:
Mounted on ceramic board.
(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm² )
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Note3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-03-07