2SC6061 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6061
2SC6061
High-Speed Switching Applications
DC-DC Converter Applications
・High-DC current gain: h_FE = 120 to 300 (I_C = 0.1 A)
・Low-collector-emitter saturation: V_{CE (sat)} = 0.14 V (max)
・High-speed switching: t_f = 0.2 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
1
2
3
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (Note 1)
DC
Pulse
Base current
Collector power
dissipation (Note 2)
t = 10s
DC
Junction temperature
Storage temperature range
V_CBO
V_CEX
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
180
V
150
V
120
V
7
V
1.0
A
2.0
A
0.1
A
1000
mW
625
mW
150
°C
−55 to 150
°C
1. Base
2. Emitter
3. Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01g (Typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm²)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-13