2SC6040 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC6040
Unit: mm
• High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A)
• High breakdown voltage: VCES = 800 V, VCEO = 410 V
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CES
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
800
V
800
V
410
V
8
V
1.0
A
2.0
0.5
A
1.0
W
150
°C
−55 to 150
°C
1. Base
2. Collector
3. Emitter
JEDEC
JEITA
TOSHIBA
Weight:
―
―
2-7D101A
0.2 g (typ.)
1
2004-12-01