2SC6026CT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – General Purpose Amplifier Applications

2SC6026CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC6026CT
General Purpose Amplifier Applications
• High voltage and high current
: V_CEO = 50V, I_C = 100mA (max)
• Excellent h_FE linearity : h_FE (I_C = 0.1 mA)/h_FE (I_C = 2 mA)= 0.95 (typ.)
• High h_FE
: ^hFE ^{= 120 to 400}
• Complementary to 2SA2154CT
Absolute Maximum Ratings (Ta = 25°C)
0.6±0.05
0.5±0.03
３
１
２
Unit: mm
Characteristics
Symbol
Rating
Unit
0.35±0.02
0.15±0.03
0.05±0.03
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
Collector current
Base current
V_EBO
I_C
I_B
5
V
100
mA
30
mA
CST3
1.BASE
2.EMITTER
3.COLLECTOR
Collector power dissipation
P_C (Note1)
100
mW
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-1J1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.75 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1 : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
I_CBO
V_CB = 60 V, I_E = 0
Emitter cut-off current
DC current gain
I_EBO
h_FE (Note)
V_EB = 5 V, I_C = 0
V_CE = 6 V, I_C = 2 mA
Collector-emitter saturation voltage
V_{CE (sat)} I_C = 100 mA, I_B = 10 mA
Transition frequency
f_T
V_CE = 10 V, I_C = 1 mA
Collector output capacitance
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_FE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Min Typ. Max Unit
⎯
⎯
0.1
μA
⎯
⎯
0.1
μA
120
⎯
400
⎯
⎯
0.1 0.25
V
60
⎯
⎯ MHz
⎯ 0.95 ⎯
pF
Marking
Type Name
h_FE Rank
1
7F
3
2
1
2009-04-13