2SC5976 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Transistor Silicon NPN Epitaxial Type

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5976
2SC5976
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Flash Applications
• High DC current gain: hFE = 250 to 400 (IC = 0.3 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
• High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
+0.2
2.8-0.3
+0.2
1.6-0.1
Unit: mm
1
2
3
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEX
50
V
Collector-emitter voltage
V_CEO
30
V
Emitter-base voltage
V_EBO
6
V
DC
I_C
Collector current
Pulse
I_CP
3.0
A
5.0
Base current
I_B
0.3
A
Collector power dissipation (t=10s)
1.00
P_C (Note.1)
W
Total collector power dissipation (DC)
0.625
1.Base
2.Emitter
3.Collector
JEDEC
JEITA
TOSHIBA
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm²)
―
―
2－3S1A
1
2004-07-01