2SC5765 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5765
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
2SC5765
Unit: mm
· Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.)
(IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base voltage
V_CBO
15
V
Collector-Emitter voltage
V_CEO
10
V
Emitter-Base voltage
V_EBO
7
V
Collector current
DC
I_C
Pulsed
I_CP
5
A
9
Collector power dissipation
P_C (Note1)
550
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
-55 to 150
°C
Note 1: When a device is mounted on a glass epoxy board
(35 mm ´ 30 mm ´ 1mm)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-Emitter breakdown voltage
DC current gain
Collector-Emitter saturation voltage
Collector-Output Capacitance
Note 2: Pulse test
Symbol
Test Condition
I_CBO
V_CB = 15 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V_(BR)CEO I_C = 1 mA, I_B = 0
h_FE(1) (Note2) V_CE = 1.5 V, I_C = 0.5 A
h_FE(2) (Note2) V_CE = 1.5 V, I_C = 2 A
h_FE(3) (Note2) V_CE = 1.5 V, I_C = 5 A
V_{CE (sat)}
(Note2)
I_C = 3 A, I_B = 60 mA
C_ob
V_CB = 10 V, I_E = 0, f = 1 MHz
Min. Typ. Max. Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
10
¾
¾
V
450
¾
700
320
¾
¾
170
¾
¾
¾
¾
0.27
V
¾
25
¾
pF
1
2002-01-16