2SC5738_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5738
High-Speed Switching Applications
DC-DC Converter Applications
2SC5738
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)
• High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
V_CBO
40
V
V_CEX
30
V
V_CEO
20
V
V_EBO
7
V
I_C
3.5
A
I_CP
6.0
I_B
350
mA
P_C
625
mW
(Note)
1000
T_j
150
°C
T_stg
−55 to 150
°C
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm²)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CEO}
h_FE (1)
h_FE (2)
V_{CE (sat)}
V_{BE (sat)}
C_ob
t_r
t_stg
t_f
V_CB = 40 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 2 V, I_C = 0.5 A
V_CE = 2 V, I_C = 1.6 A
I_C = 1.6 A, I_B = 32 mA
I_C = 1.6 A, I_B = 32 mA
V_CB = 10 V, I_E = 0, f = 1 MHz
See Figure 1.
V_CC ∼− 12 V, R_L = 7.5 Ω
I_B1 = −I_B2 = 53 mA
Min Typ. Max Unit
⎯
⎯ 100 nA
⎯
⎯ 100 nA
20
⎯
⎯
V
400 ⎯ 1000
200 ⎯
⎯
⎯
⎯ 0.15
V
⎯
⎯ 1.10
V
⎯
18
⎯
pF
⎯ 100 ⎯
⎯ 350 ⎯
ns
⎯
90
⎯
1
2004-07-01