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2SC5720 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – MEDIUM POWER AMPLIFIER APPLICATIONS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5720
MEDIUM POWER AMPLIFIER APPLICATIONS
STOROBO FLASH APPLICATIONS
2SC5720
Unit: mm
· Low Saturation Voltage:
VCE (sat) (1) = 0.25 V (max)
(IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-Base voltage
VCBO
15
V
Collector-Emitter voltage
VCEO
10
V
Emitter-Base voltage
VEBO
7
V
Collector current
DC
IC
Pulsed
ICP
5
A
9
Collector power dissipation
PC (Note1)
550
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Note1: When a device is mounted on a glass epoxy board
(35 mm ´ 30 mm ´ 1mm)
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
Characteristic
Collector cut-off current
Emitter cut-off current
Collector-Emitter breakdown voltage
DC current gain
Collector-Emitter saturation voltage
Collector output capacitance
Note2: Pulse test
Symbol
Test Condition
ICBO
VCB = 15 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V(BR)CEO IC = 1 mA, IB = 0
hFE(1) (Note2) VCE = 1.5 V, IC = 0.5 A
hFE(2) (Note2) VCE = 1.5 V, IC = 2 A
hFE(3) (Note2) VCE = 1.5 V, IC = 5 A
VCE (sat)
(Note2)
IC = 3 A, IB = 60 mA
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
¾
¾
0.1
mA
¾
¾
0.1
mA
10
¾
¾
V
700
¾ 2000
450
¾
¾
240
¾
¾
¾
¾
0.25
V
¾
30
¾
pF
1
2001-10-03