2SC5695 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Horizontal Deflection Output for High Resolution Display, Color TV

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5695
Horizontal Deflection Output for High Resolution Display,
Color TV
2SC5695
Unit: mm
· High voltage: VCBO = 1500 V
· Low saturation voltage: VCE (sat) = 3 V (max)
· High speed: tf (2) = 0.1 µs (typ.)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
1500
V
700
V
5
V
22
A
44
11
A
200
W
150
°C
-55~150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F2A
Weight: 9.75 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Storage time
Switching time
Fall time
Storage time
Fall time
Symbol
Test Condition
I_CBO
I_EBO
V_{(BR) CEO}
h_FE (1)
h_FE (2)
h_FE (3)
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
t_stg (1)
t_f (1)
t_stg (2)
t_f (2)
V_CB = 1500 V, I_E = 0
V_EB = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 2 A
V_CE = 5 V, I_C = 10 A
V_CE = 5 V, I_C = 17 A
I_C = 17 A, I_B = 4.25 A
I_C = 17 A, I_B = 4.25 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 8 A, I_{B1 (end)} = 1.4 A,
f_H = 64 kHz
I_CP = 8 A, I_{B1 (end)} = 1.1 A,
f_H = 100 kHz
Min Typ. Max Unit
¾
¾
1
mA
¾
¾
10
mA
700
¾
¾
V
20
¾
50
8
¾
17
¾
4.8
¾
8.3
¾
¾
3
V
¾
1.0
1.5
V
¾
2
¾ MHz
¾
280
¾
pF
¾
2.5
3
¾ 0.15 0.3
ms
1.6
1.8
¾
0.1 0.15
1
2001-10-29