2SC5684_04 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Switching Regulator and High-Voltage Switching

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5684
Switching Regulator and High-Voltage Switching
Applications
2SC5684
Unit: mm
• Excellent switching times (IC = 0.3 A)
: tr = 0.7 µs (max), tf = 0.5 µs (max)
• High collector breakdown voltage: VCEO = 800 V
• High-speed DC-DC converter applications
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
900
V
800
V
7
V
0.8
A
1.5
0.4
A
1.8
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10T1A
Weight: 1.5 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
V_CB = 720 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 1 mA, I_E = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 1 mA
V_CE = 5 V, I_C = 0.08 A
I_C = 0.3 A, I_B = 0.06 A
I_C = 0.3 A, I_B = 0.06 A
Min Typ. Max Unit
―
― 100 µA
―
―
1
mA
900 ―
―
V
800 ―
―
V
10
―
―
15
―
60
―
―
1.0
V
―
―
1.2
V
Rise time
t_r
20 µs
I_B1
Input
Output
―
―
0.7
Switching time Storage time
t_stg
I_B2
V_CC ≈ 360 V
―
―
4.5
µs
Fall time
t_f
I_B1 = 0.06 A, I_B2 = −0.12 A
Duty cycle ≤ 1%
―
―
0.5
1
2004-07-26