2SC5563_04 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Dynamic Focus Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5563
Dynamic Focus Applications
2SC5563
Unit: mm
• High voltage: VCEO = 1500 V
• Small collector output capacitance: Cob = 2.0 pF (typ.) (VCB = 100 V)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Tc = 25°C
Ta = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
1500
V
1500
V
7
V
20
mA
40
10
mA
10
W
2
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_FE
V_{CE (sat)}
V_{BE (sat)}
C_ob
V_CB = 1500 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 0.1 mA, I_E = 0
I_C = 1 mA, I_B = 0
V_CE = 5 V, I_C = 1 mA
I_C = 10 mA, I_B = 2 mA
I_C = 10 mA, I_B = 2 mA
V_CB = 100 V, f = 1 MHz, I_E = 0
Min Typ. Max Unit
―
―
1
µA
―
―
10
µA
1500 ―
―
V
1500 ―
―
V
10
―
60
―
―
5.0
V
―
―
1.3
V
―
2.0
―
pF
Marking
C5563
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26