2SC5550_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Application for Inverter Lighting

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5550
High-Speed Switching Application for Inverter Lighting
System
2SC5550
Unit: mm
• Suitable for RCC circuit (guaranteed small current hFE)
: hFE = 13 (min) (IC = 1 mA)
• High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)
• High breakdown voltage: VCEO = 400 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
400
V
400
V
7
V
1
A
2
0.5
A
1.5
W
10
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
1
2004-07-26