2SC5549_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Application for Inverter Lighting

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5549
High-Speed Switching Application for Inverter Lighting
System
2SC5549
Unit: mm
• Suitable for RCC circuits. (guaranteed small current hFE)
: hFE = 13 (min) (IC = 1 mA)
• High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A)
• High breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
400
V
400
V
7
V
1
A
2
0.5
A
0.9
W
150
°C
−55 to 150
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
I_CBO
I_EBO
V _{(BR) CBO}
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
V_CB = 320 V, I_E = 0
V_EB = 7 V, I_C = 0
I_C = 1 mA, I_E = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 1 mA
V_CE = 5 V, I_C = 0.04 A
I_C = 0.2 A, I_B = 25 mA
I_C = 0.2 A, I_B = 25 mA
JEDEC
TO-92MOD
JEITA
SC-65
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
―
― 100 µA
―
― 100 µA
400 ―
―
V
400 ―
―
V
13
―
―
20
―
65
―
―
1.0
V
―
―
1.3
V
Rise time
Switching time Storage time
t_r
V_CC ≈ 200 V
20 µs
I_C
―
―
0.5
t_stg
Input ^IB1
Output
―
―
5.0
µs
I_B2
Fall time
t_f
I_B1 = 0.03 A, I_B2 = −0.06 A,
Duty cycle ≤ 1%
―
―
0.3
1
2004-07-26