2SC5548A_05 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Voltage Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5548A
Unit: mm
• High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A)
• High collector breakdown voltage: VCEO = 400 V
• High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
600
V
400
V
7
V
2
A
4
0.5
A
1.0
W
15
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1
2005-02-01