2SC5466_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Dynamic Focus Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5466
Dynamic Focus Applications
High Voltage Switching Applications
High Voltage Amplifier Applications
2SC5466
Unit: mm
• High voltage: VCEO = 800 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
800
V
800
V
5
V
50
mA
25
mA
2.0
W
10
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
I_CBO
I_EBO
h_FE
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 640 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 7 mA
I_C = 20 mA, I_B = 4 mA
I_C = 20 mA, I_B = 4 mA
V_CE = 10 V, I_C = 3 mA
V_CB = 100 V, f = 1 MHz
Marking
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Min Typ. Max Unit
―
―
1.0
µA
―
―
10
µA
15
―
―
―
―
1.0
V
―
―
1.5
V
―
5.5
― MHz
―
2.2
―
pF
C5466
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-26