2SC5460_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Dynamic Focus Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5460
Dynamic Focus Applications
High-Voltage Switching Applications
High-Voltage Amplifier Applications
2SC5460
Unit: mm
• High breakdown voltage: VCEO = 800 V
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
800
V
800
V
5
V
50
mA
25
mA
1.5
W
10
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
I_CBO
I_EBO
h_FE
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
V_CB = 640 V, I_E = 0
V_EB = 5 V, I_C = 0
V_CE = 5 V, I_C = 7 mA
I_C = 20 mA, I_B = 4 mA
I_C = 20 mA, I_B = 4 mA
V_CE = 10 V, I_C = 3 mA
V_CB = 100 V, f = 1 MHz
―
―
1.0
µA
―
―
10
µA
15
―
―
―
―
1.0
V
―
―
1.5
V
―
5.5
― MHz
―
2.2
―
pF
Note: When an external heat sink is used for the device, insulate using, for example, silicone rubber.
When an external heat sink is not used, Toshiba recommends that the plastic part be at least 2 mm away from
its surroundings.
1
2004-07-26