2SC5411 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

2SC5411
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5411
HORIZONTAL DEFLECTION OUTPUT FOR HIGH
RESOLUTION
DISPLAY, COLOR TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
l High Voltage
: VCBO = 1500 V
l Low Saturation Voltage : VCE (sat) = 3 V (Max.)
l High Speed
: tf = 0.15 µs (Typ.)
l Collector Metal (Fin) is Fully Covered with Mold Resin.
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
RATING
1500
600
5
14
28
7
60
150
−55~150
UNIT
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut−off Current
Emitter Cut−off Current
Emitter−Base Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Switching Time
Storage Time
Fall Time
I_CBO
I_EBO
V _{(BR) CEO}
h_{FE (1)}
h_{FE (2)}
V_{CE (sat)}
V_{BE (sat)}
f_T
C_ob
t_stg
t_f
V_CB = 1500 V, I_E = 0
VE_B = 5 V, I_C = 0
I_C = 10 mA, I_B = 0
V_CE = 5 V, I_C = 2 A
V_CE = 5 V, I_C = 11 A
I_C = 11 A, I_B = 2.75 A
I_C = 11 A, I_B = 2.75 A
V_CE = 10 V, I_C = 0.1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
I_CP = 8.5 A, I_B1 (end) = 1.6 A
f_H = 64 kHz
MIN TYP. MAX UNIT
―
―
1
mA
―
―
10
µA
600
―
―
V
10
―
40
4
―
8
―
―
3
V
―
1.0 1.5
V
―
2
― MHz
―
190
―
pF
―
2.5 3.5
µs
― 0.15 0.3
1
2001-08-20