2SC5376FV Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376FV
2SC5376FV
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
• Low Collector Saturation Voltage: V_{CE (sat) (1)} = 15 mV (typ.)
@I_C = 10 mA/I_B = 0.5 mA
• High Collector Current: I_C = 400 mA (max)
Unit: mm
1.2±0.05
0.8±0.05
1
2
3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
15
V
Collector-emitter voltage
V_CEO
12
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
400
mA
Base current
I_B
50
mA
Collector power dissipation
P_C
150 *
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
VESM
1.BASE
2.EMITTER
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015g (typ.)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
Type Name
h_FE Classification
FA
1
2004-06-07