2SC5376FV-A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376FV
2SC5376FV
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
Unit: mm
• Low Collector Saturation Voltage: V_{CE (sat) (1)} = 15 mV (typ.)
@I_C = 10 mA/I_B = 0.5 mA
• High Collector Current: I_C = 400 mA (max)
1.2±0.05
0.8±0.05
Absolute Maximum Ratings (Ta = 25°C)
1
2
3
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V_CBO
15
V
Collector-emitter voltage
V_CEO
12
V
Emitter-base voltage
V_EBO
5
V
Collector current
Base current
I_C
400
mA
I_B
50
mA
VESM
1.BASE
2.EMITTER
3.COLLECTOR
Collector power dissipation
P_C
150 *
mW
JEDEC
―
Junction temperature
Storage temperature range
T_j
150
°C
T_stg
−55~150
°C
JEITA
TOSHIBA
―
2-1L1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.5 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
0.5mm
0.45mm
0.45mm
0.4mm
Marking
Type Name
h_FE Classification
FA
1
2007-11-01