2SC5376F Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376F
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
2SC5376F
Unit: mm
· Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
· High Collector Current: IC = 400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
15
V
12
V
5
V
400
mA
50
mA
100
mW
125
°C
-55 to 125
°C
JEDEC
JEITA
TOSHIBA
―
―
2-2HA1A
Marking
Type Name
h_FE Classification
FA
Equivalent Circuit (top view)
1
2002-01-16