2SC5361_04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Voltage Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5361
High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5361
Unit: mm
• Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A)
• High breakdown voltage: VCEO = 800 V
• High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
Rating
Unit
900
V
800
V
7
V
3
A
5
1
A
1.5
W
40
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S1A
Weight: 1.5 g (typ.)
1
2004-07-26