2SC5358_04 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Power Amplifier Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5358
Power Amplifier Applications
2SC5358
Unit: mm
• High breakdown voltage: VCEO = 230 V
• Complementary to 2SA1986
• Suitable for use in 80-W high fidelity audio amplifier’s output stage
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
Rating
Unit
230
V
230
V
5
V
15
A
1.5
A
150
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-16C1A
Weight: 4.7 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
I_CBO
V_CB = 230 V, I_E = 0
I_EBO
V_EB = 5 V, I_C = 0
V _{(BR) CEO} I_C = 50 mA, I_B = 0
h_{FE (1)}
V_CE = 5 V, I_C = 1 A
(Note)
h_{FE (2)}
V_{CE (sat)}
V_BE
f_T
C_ob
V_CE = 5 V, I_C = 7 A
I_C = 8 A, I_B = 0.8 A
V_CE = 5 V, I_C = 7 A
V_CE = 5 V, I_C = 1 A
V_CB = 10 V, I_E = 0, f = 1 MHz
Note: h_{FE (1)} classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
―
―
5.0
µA
―
―
5.0
µA
230 ―
―
V
55
― 160
35
87
―
―
0.4 3.0
V
―
1.0 1.5
V
―
30
― MHz
― 200 ―
pF
1
2004-07-07