2SC5355_05 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – High Voltage Switching Applications

TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SC5355
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5355
Unit: mm
• Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max)
• High collector breakdown voltage: VCEO = 400 V
• High DC current gain: hFE = 20 (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
600
V
400
V
7
V
5
A
7
1
A
1.5
W
25
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
1
2005-02-01