2SC5353_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications

2SC5353
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5353
Switching Regulator and High Voltage Switching
Applications
High-Speed DC-DC Converter Applications
Unit: mm
• Excellent switching times: t_r = 0.7 μs (max), t_f = 0.5 μs (max)
• High collectors breakdown voltage: V_CEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
900
V
800
V
7
V
3
A
5
1
A
2.0
W
25
150
°C
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-10